MCH6605-TL-E

onsemi

MCH6605-TL-E

模拟与电源

MOSFET 2P-CH 50V 0.14A 6MCPH

停产/老旧6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs22Ohm @ 40mA, 10V
基础料号MCH6605
配置2 P-Channel (Dual)
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs1.32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6.2pF @ 10V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压50V
Current - Continuous Drain (Id) @ 25°C140mA
Power - Max800mW

机械

封装Tape & Reel (TR)
Package / Case6-SMD, Flat Leads
供应商器件封装6-MCPH

环境

工作温度150°C (TJ)