MCH5837-TL-E

onsemi

MCH5837-TL-E

模拟与电源

MOSFET N-CH 20V 2A 5MCPH

停产/老旧6-SMD (5 Leads), Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs145mOhm @ 1A, 4V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds115 pF @ 10 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压20 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
最大功耗800mW (Ta)

机械

封装Bulk
Package / Case6-SMD (5 Leads), Flat Lead
供应商器件封装5-MCPH

环境

工作温度150°C (TJ)