IRLM120ATF

onsemi

IRLM120ATF

Datasheet

模拟与电源

MOSFET N-CH 100V 2.3A SOT223-4

已停产TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs220mOhm @ 1.15A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
最大功耗2.7W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223-4

环境

工作温度-55°C~150°C(TJ)