IRLI610ATU

onsemi

IRLI610ATU

模拟与电源

MOSFET N-CH 200V 3.3A I2PAK

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.5Ohm @ 1.65A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
制造商onsemi
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
最大功耗3.1W (Ta), 33W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装I2PAK (TO-262)

环境

工作温度-55°C~150°C(TJ)