IRFN214BTA_FP001

Name: IRFN214BTA_FP001
Brand: onsemi

模拟与电源

MOSFET N-CH 250V 600MA TO92-3

停产/老旧TO-226-3, TO-92-3 (TO-226AA) Formed Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2Ohm @ 300mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	250 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
最大功耗	1.8W (Ta)

工作温度	-55°C~150°C(TJ)