HGTP10N120BN

onsemi

HGTP10N120BN

Datasheet

模拟与电源

IGBT 1200V 35A 298W TO220AB

停产/老旧TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号HGTP10
Gate Charge100 nC
IGBT TypeNPT
输入类型Standard
制造商onsemi
安装类型Through Hole
Product StatusObsolete
Switching Energy320µJ (on), 800µJ (off)
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Power - Max298 W

机械

封装Tube
Package / CaseTO-220-3
供应商器件封装TO-220-3

环境

工作温度-55°C ~ 150°C (TJ)