HGTD3N60C3S9A

onsemi

HGTD3N60C3S9A

模拟与电源

IGBT 600V 6A 33W TO252AA

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号HGTD3N60
Gate Charge10.8 nC
输入类型Standard
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
Switching Energy85µJ (on), 245µJ (off)
Test Condition480V, 3A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 3A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)24 A
Power - Max33 W

机械

封装Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252AA

环境

工作温度-40°C ~ 150°C (TJ)