HGT1S20N60A4S9A

onsemi

HGT1S20N60A4S9A

模拟与电源

IGBT 600V 70A 290W TO263AB

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号HGT1S20
Gate Charge142 nC
输入类型Standard
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
Switching Energy105µJ (on), 150µJ (off)
Td (on/off) @ 25°C15ns/73ns
Test Condition390V, 20A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)70 A
Current - Collector Pulsed (Icm)280 A
Power - Max290 W

机械

封装Tube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装D²PAK (TO-263)

环境

工作温度-55°C ~ 150°C (TJ)