FQU7N20TU

Name: FQU7N20TU
Brand: onsemi

模拟与电源

MOSFET N-CH 200V 5.3A IPAK

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	690mOhm @ 2.65A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
最大功耗	2.5W (Ta), 45W (Tc)

工作温度	-55°C~150°C(TJ)