FQU2N90TU

Name: FQU2N90TU
Brand: onsemi

模拟与电源

MOSFET N-CH 900V 1.7A IPAK

停产/老旧TO-251-3 Short Leads, IPAK, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7.2Ohm @ 850mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	900 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
最大功耗	2.5W (Ta), 50W (Tc)

工作温度	-55°C ~ 150°C (TJ)