FQT1N60CTF-WS

Name: FQT1N60CTF-WS
Brand: onsemi

模拟与电源

MOSFET N-CH 600V 200MA SOT223-4

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.5Ohm @ 100mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Active
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
最大功耗	2.1W (Tc)

工作温度	-55°C ~ 150°C (TJ)