FQN1N50CBU

Name: FQN1N50CBU
Brand: onsemi

模拟与电源

MOSFET N-CH 500V 380MA TO92-3

停产/老旧TO-226-3, TO-92-3 (TO-226AA)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6Ohm @ 190mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	380mA (Tc)
最大功耗	890mW (Ta), 2.08W (Tc)

工作温度	-55°C~150°C(TJ)