FQI7N80TU

Name: FQI7N80TU
Brand: onsemi

模拟与电源

MOSFET N-CH 800V 6.6A I2PAK

已停产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.5Ohm @ 3.3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Last Time Buy
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
最大功耗	3.13W (Ta), 167W (Tc)

工作温度	-55°C~150°C(TJ)