FQD5P10TM

onsemi

FQD5P10TM

Datasheet

模拟与电源

MOSFET P-CH 100V 3.6A DPAK

停产/老旧TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.05Ohm @ 1.8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
系列QFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
最大功耗2.5W (Ta), 25W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装TO-252AA

环境

工作温度-55°C ~ 150°C (TJ)