FQB9N08LTM

Name: FQB9N08LTM
Brand: onsemi

模拟与电源

MOSFET N-CH 80V 9.3A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	210mOhm @ 4.65A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Obsolete
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	9.3A (Tc)
最大功耗	3.75W (Ta), 40W (Tc)

工作温度	-55°C ~ 175°C (TJ)