FQB3P50TM

Name: FQB3P50TM
Brand: onsemi

模拟与电源

MOSFET P-CH 500V 2.7A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.9Ohm @ 1.35A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Obsolete
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
最大功耗	3.13W (Ta), 85W (Tc)

工作温度	-55°C ~ 150°C (TJ)