来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16.75A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 25 V |
| 制造商 | onsemi |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | QFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| 漏源电压 | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| 最大功耗 | 3.75W (Ta), 155W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商器件封装 | D²PAK (TO-263) |
| 工作温度 | -55°C ~ 175°C (TJ) |
|---|