FQB13N10TM

Name: FQB13N10TM
Brand: onsemi

模拟与电源

MOSFET N-CH 100V 12.8A D2PAK

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	180mOhm @ 6.4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
制造商	onsemi
安装类型	Surface Mount
包装	Tape & Reel (TR)
产品状态	停产/老旧
系列	QFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12.8A (Tc)
最大功耗	3.75W (Ta), 65W (Tc)

Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装	TO-263 (D2PAK)

工作温度	-55°C ~ 175°C (TJ)