FGD5T120SH

onsemi

FGD5T120SH

Datasheet

模拟与电源

IGBT 1200V 5A FS3 DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号FGD5T120
Gate Charge6.7 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商onsemi
安装类型Surface Mount
Product StatusActive
Switching Energy247µJ (on), 94µJ (off)
Td (on/off) @ 25°C4.8ns/24.8ns
Test Condition600V, 5A, 30Ohm, 15V
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 5A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)12.5 A
Power - Max69 W

机械

封装Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252AA

环境

工作温度-55°C~150°C(TJ)