FGA50N100BNTD2

onsemi

FGA50N100BNTD2

Datasheet

模拟与电源

IGBT 1000V 50A 156W TO3P

停产/老旧TO-3P-3, SC-65-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge257 nC
IGBT TypeNPT and Trench
输入类型Standard
制造商onsemi
安装类型Through Hole
Product StatusObsolete
Reverse Recovery Time (trr)75 ns
Td (on/off) @ 25°C34ns/243ns
Test Condition600V, 60A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A

电气

Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Power - Max156 W

机械

封装Tube
Package / CaseTO-3P-3, SC-65-3
供应商器件封装TO-3P

环境

工作温度-55°C ~ 150°C (TJ)