FDS6982

onsemi

FDS6982

模拟与电源

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs28mOhm @ 6.3A, 10V
基础料号FDS69
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 10V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C6.3A, 8.6A
Power - Max900mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-55°C ~ 150°C (TJ)