FDR858P

onsemi

FDR858P

模拟与电源

MOSFET P-CH 30V 8A SUPERSOT8

停产/老旧8-LSOP (0.130", 3.30mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 15 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
最大功耗1.8W (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-LSOP (0.130", 3.30mm Width)
供应商器件封装SuperSOT™-8

环境

工作温度-55°C ~ 150°C (TJ)