FDMS2D4N03S

onsemi

FDMS2D4N03S

Datasheet

模拟与电源

MOSFET N-CH 30V 163A 8PQFN

停产/老旧8-PowerSMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.8mOhm @ 28A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6540 pF @ 15 V
制造商onsemi
安装类型Surface Mount
包装Tape & Reel (TR)
产品状态停产/老旧
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C163A (Tc)
最大功耗75W (Tc)

机械

Package / Case8-PowerSMD, Flat Leads
供应商器件封装8-PQFN (5x6), Power56

环境

工作温度-55°C ~ 150°C (TJ)