FDMC8878

onsemi

FDMC8878

模拟与电源

MOSFET N-CH 30V 9.6A/16.5A 8MLP

停产/老旧8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs14mOhm @ 9.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
系列PowerTrench®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 16.5A (Tc)
最大功耗2.1W (Ta), 31W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装8-MLP (3.3x3.3)

环境

工作温度-55°C ~ 150°C (TJ)