FDMC86265P

onsemi

FDMC86265P

Datasheet

模拟与电源

MOSFET P-CH 150V 1A/1.8A 8MLP

已停产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.2Ohm @ 1A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 75 V
制造商onsemi
安装类型Surface Mount
Product StatusLast Time Buy
系列PowerTrench®
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1A (Ta), 1.8A (Tc)
最大功耗2.3W (Ta), 16W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装8-MLP (3.3x3.3)

环境

工作温度-55°C ~ 150°C (TJ)