FDMC86183

onsemi

FDMC86183

Datasheet

模拟与电源

MOSFET N-CH 100V 47A 8PQFN

停产/老旧8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs12.8mOhm @ 16A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1515 pF @ 50 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 90µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
最大功耗52W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装8-PQFN (3.3x3.3), Power33

环境

工作温度-55°C ~ 150°C (TJ)