FDD86081-F085

Name: FDD86081-F085
Brand: onsemi

模拟与电源

MOSFET N-CH 100V 21A TO252-3

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	31.5mOhm @ 6A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	493 pF @ 50 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 36µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta), 21.4A (Tc)
最大功耗	3W (Ta), 31.3W (Tc)

封装	Tape & Reel (TR)