通用
| Rds On (Max) @ Id, Vgs | 199mOhm @ 8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 100 V |
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | SupreMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |