FCPF150N65F

onsemi

FCPF150N65F

Datasheet

模拟与电源

MOSFET N-CH 650V 14.9A TO220F

已停产TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3737 pF @ 100 V
制造商onsemi
安装类型Through Hole
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 2.4mA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C14.9A (Tc)
最大功耗39W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220F-3

环境

工作温度-55°C ~ 150°C (TJ)