CPH3355-TL-H

onsemi

CPH3355-TL-H

Datasheet

模拟与电源

MOSFET P-CH 30V 2.5A 3CPH

停产/老旧TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs156mOhm @ 1A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds172 pF @ 10 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
最大功耗1W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装3-CPH

环境

工作温度150°C (TJ)