通用
| 基础料号 | BDV65 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Power - Max | 125 W |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-218-3 |
| 供应商器件封装 | SOT-93 |
环境
| 工作温度 | -65°C ~ 150°C (TJ) |
|---|