通用
| Rds On (Max) @ Id, Vgs | 23Ohm @ 40mA, 4V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.4 pF @ 10 V |
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 23Ohm @ 40mA, 4V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.4 pF @ 10 V |
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| 漏源电压 | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 70mA (Ta) |
| 最大功耗 | 250mW (Ta) |
| 封装 | Bag |
|---|---|
| Package / Case | SC-72 |
| 供应商器件封装 | 3-SPA |
| 工作温度 | 150°C (TJ) |
|---|