2SJ646-TL-E

Name: 2SJ646-TL-E
Brand: onsemi

模拟与电源

P-CHANNEL SILICON MOSFET

在产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	75mOhm @ 4A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 10 V
制造商	onsemi
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.6V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	8A
最大功耗	1W (Ta), 15W (Tc)

工作温度	150°C