通用
| 基础料号 | 2SD1012 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
|---|---|
| Current - Collector (Ic) (Max) | 700 mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 50mA, 2V |
| Power - Max | 250 mW |
| Frequency - Transition | 250MHz |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-SIP |
| 供应商器件封装 | 3-SPA |
环境
| 工作温度 | 125°C (TJ) |
|---|