2SB1167S

onsemi

2SB1167S

模拟与电源

POWER BIPOLAR TRANSISTOR, PNP

在产TO-225AA, TO-126-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商onsemi
安装类型Through Hole
Product StatusActive
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 1.5A

电气

Voltage - Collector Emitter Breakdown (Max)100 V
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 500mA, 5V
Power - Max1.2 W
Frequency - Transition130MHz

机械

封装Bulk
Package / CaseTO-225AA, TO-126-3
供应商器件封装TO-126LP

环境

工作温度150°C (TJ)