通用
| 基础料号 | 2SA2169 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 580mV @ 250mA, 5A |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | 2SA2169 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 580mV @ 250mA, 5A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Power - Max | 950 mW |
| Frequency - Transition | 130MHz |
| 封装 | Bulk |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| 供应商器件封装 | TP |
| 工作温度 | 150°C (TJ) |
|---|