通用
| 制造商 | onsemi |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 制造商 | onsemi |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Power - Max | 1 W |
| Frequency - Transition | 420MHz |
| 封装 | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| 供应商器件封装 | 3-MP |
| 工作温度 | 150°C (TJ) |
|---|