通用
| 基础料号 | 2N5770 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
| Product Status | Obsolete |
| Transistor Type | NPN |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 15V |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 10V |
| Power - Max | 350mW |
| Gain | 15dB |
机械
| 封装 | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| 供应商器件封装 | TO-92-3 |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|