通用
| 基础料号 | 2N522 |
|---|---|
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 3mA, 10mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Power - Max | 625 mW |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| 供应商器件封装 | TO-92-3 |