PSMN9R0-30LL,115

Name: PSMN9R0-30LL,115
Brand: NXP USA Inc

模拟与电源

MOSFET N-CH 30V 21A 8DFN

停产/老旧8-VDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9mOhm @ 5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1193 pF @ 15 V
制造商	NXP USA Inc.
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.15V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
最大功耗	50W (Tc)

工作温度	-55°C ~ 150°C (TJ)