PSMN2R8-40BS,118

Name: PSMN2R8-40BS,118
Brand: NXP USA Inc

模拟与电源

MOSFET N-CH 40V 100A D2PAK

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.9mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4491 pF @ 20 V
制造商	NXP USA Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	211W (Tc)

工作温度	-55°C~175°C(TJ)