通用
| Rds On (Max) @ Id, Vgs | 294mOhm @ 2.6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 657 pF @ 30 V |
| 制造商 | NXP USA Inc. |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | TrenchMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |