PHX27NQ11T,127

NXP USA Inc

PHX27NQ11T,127

模拟与电源

MOSFET N-CH 110V 20.8A TO220F

停产/老旧TO-220-3 Full Pack, Isolated Tab模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs50mOhm @ 14A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1240 pF @ 25 V
制造商NXP USA Inc.
安装类型Through Hole
Product StatusObsolete
系列TrenchMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压110 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20.8A (Tc)
最大功耗50W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack, Isolated Tab
供应商器件封装TO-220F

环境

工作温度-55°C~150°C(TJ)