通用
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
|---|---|
| 基础料号 | PHN210 |
| 配置 | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| 制造商 | NXP USA Inc. |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | TrenchMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |