通用
| 基础料号 | PDTA114 |
|---|---|
| 制造商 | NXP USA Inc. |
| 安装类型 | Through Hole |
| 包装 | Tape & Box (TB) |
| 产品状态 | 停产/老旧 |
| Resistor - Base (R1) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Power - Max | 500 mW |
机械
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
|---|---|
| 供应商器件封装 | TO-92-3 |