通用
| 基础料号 | BUT12 |
|---|---|
| 制造商 | NXP USA Inc. |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 5A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Power - Max | 23 W |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| 供应商器件封装 | TO-220F |
环境
| 工作温度 | 150°C (TJ) |
|---|