BUK9E8R5-40E,127

NXP USA Inc

BUK9E8R5-40E,127

模拟与电源

MOSFET N-CH 40V 75A I2PAK

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs6.6mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
制造商NXP USA Inc.
安装类型Through Hole
Product StatusObsolete
系列TrenchMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2.1V @ 1mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
最大功耗96W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装I2PAK

环境

工作温度-55°C~175°C(TJ)