通用
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 50A, 10V |
|---|---|
| FET Feature | Temperature Sensing Diode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5836 pF @ 25 V |
| 制造商 | NXP USA Inc. |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | TrenchMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |