BUK7226-75A118

Name: BUK7226-75A118
Brand: NXP USA Inc

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	26mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2385 pF @ 25 V
制造商	NXP USA Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	7 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
最大功耗	158W (Ta)

封装	Bulk