来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
|---|---|
| 基础料号 | 2N70 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
| 制造商 | NXP USA Inc. |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | TrenchMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| 漏源电压 | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| 最大功耗 | 830mW (Ta) |
| 封装 | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| 供应商器件封装 | TO-92-3 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|